| PART |
Description |
Maker |
| CM1200HB-66H |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
|
| CM1500HC-66R |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
1500 A, 3300 V, N-CHANNEL IGBT
|
Mitsubishi Electric Semiconductor
|
| DIM200PHM33-F000 |
Half Bridge IGBT Module 200 A, 3300 V, N-CHANNEL IGBT
|
DYNEX SEMICONDUCTOR LTD
Dynex Semiconductor, Ltd.
|
| 18696 18696-04 |
OUTLINE DRAWING HUB2700-S/3300-S
OUTLINE DRAWING, HUB2700-S/3300-S
|
VICOR[Vicor Corporation]
|
| 22R335 |
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR
|
C&D TECHNOLOGIES INC
|
| CTDS1608BLF-335 |
1 ELEMENT, 3300 uH, GENERAL PURPOSE INDUCTOR, SMD
|
CENTRAL TECHNOLOGIES
|
| CGH35015F |
15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX
|
CREE[Cree, Inc]
|
| HEMT-3300 |
HEMT-3300 · T-1 3/4 670 nm High Radiant Intensity Emitter
|
Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
|
| QID3320002 |
Dual IGBT HVIGBT Module 200 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| QID3310006 |
Dual IGBT HVIGBT Module 100 Amperes/3300 Volts
|
Powerex Power Semicondu...
|
| LXE6.3VB332M18X15LL |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 3300 uF, THROUGH HOLE MOUNT RADIAL LEADED
|
United Chemi-Con, Inc.
|
